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Approved For Release 2000/08/10 : CIA-RDP96-00792R000300020002-1 LN465-92 X-ray analysis was conducted 2,000 kilometers away in Chengdu, and the subject did not know when or where the analysis would be done, what instruments would be used, or who would be conducting it, so there is reason to believe that the changes in diffraction spectral lines indicate corresponding changes in the crystalline structure. In order to understand this change, we can first take a look at the general changes in material crystalline states. (ERO ARS ILLUSTRATION FOUR: CHART OF MATERIAL COOLING PROCESS 1. Crystalline. 2. Noncrystalline (glass}. 3. Super cooled liquid. 4. Liquid state. 5. Rapid quenching cooling. 6. Slow cooling. NOTES: Te is melting point, and between Te and Tr is the temperature range of the super cold Liquid. Crystals and non crystals under the appropriate conditions can change back and forth. For example, in order to obtain crystals, it is possible to control a tempersture change process to melt the material until it becomes liquid, and then allow it to cool slowly (as. shown in line one in illustration four}, or, if one wishes to obtain non crystal, then it can be quenched (as shown in line two in illustration four}. In this manner, if a melted material originally had a monocrystalline structure, following line two, there will be a transition from a monocrystalline to nonecrystalline structure. Conversely, it is possible to change a nonerystal to ai monocrystal. Furthermore, at temperatures below 40 degrees Kelvin, using a 120 KeV powered As + Sil - xGex (x = 0.16 to 0.29) and silicon strain layer under foes ion injection, then the strain layer structure becomes non-crystalline. This is because the high energy ions injected into the crystal collide with the silicon and germanium atoms of the crystal lattice and cause a shift of the points, thus destroying the original crystalline lattice structure?. Also, modern light information storage technology uses high intensity (as much as 106 w.ch-2) laser to cause the crystals on the semiconductor laser disk material to go into a 29 Approved For Release 2000/08/10 : CIA-RDP96-00792R000300020002-1